DOT800T is a complete solution for power testing that combines in a single machine all the resources to perform ISO, AC, DC tests on the whole range of power applications, from wafer level to final product test.
DOT800T addresses the test requirements of traditional Silicon devices as well as new Gallium Nitride and Silicon Carbide technologies, covering their performance range with the highest voltage and current source capabilities, high switching frequency and low current measurements.
DOT800T is based on a multi-core architecture: the tester can be equipped with one to six independent and configurable test cores, to perform static, dynamic and isolation tests on dedicated stations, each of which with an independent controller.
The tester features a set of state-of-the-art, specialized instruments for power semiconductor testing.
High voltage and current can be supplied simultaneously during the test, while extreme current measurement sensitivity and high-frequency built-in digitizers guarantee the best resolution and accuracy in leakage and breakdown measurements.
A careful design of tester connection layout, sockets and contactors minimizes the stray inductance along the whole signal path, so as to avoid any voltage overshoots during signal commutation.
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