Get ready for a deep dive into the remarkable Qorvo Gen 4 750V, 23mΩ SiC FET in our latest "3 for 3" video, brought to you by Mouser Electronics. This impressive 4th-generation silicon carbide FET is designed to deliver outstanding performance, low conduction, and switching losses, all while improving system power density. It's a game-changer in the world of power semiconductors.

But what sets the Qorvo SiC FET apart? The magic happens through a unique cascode circuit configuration. In this design, a silicon carbide JFET is co-packaged with a low-voltage silicon MOSFET, producing a normally-off silicon carbide FET. What's so great about this? Well, it means that the gate voltage of Qorvo's silicon carbide FETs is compatible with Si MOSFETs and IGBTs, making it incredibly accessible for engineers new to wide band-gap semiconductors. Plus, it's housed in a D2PAK-7L package that streamlines manufacturing, reduces costs, and enhances high-current switching.

This SiC FET can handle an impressive 86-amp continuous drain current at 100 degrees Celsius and a whopping 344-amp pulsed drain current at 25 degrees Celsius. With a junction temperature range of up to 175 degrees Celsius, it's ready to tackle the most demanding applications with ease.

The secret sauce to its outstanding performance is the unique cascode configuration. While silicon carbide JFETs have remarkable performance, they are typically normally on, which can be problematic for switch mode power conversion. This design stacks the silicon carbide JFET in series with a normally-off low-voltage silicon MOSFET, with the gate of the JFET tied to the source of the MOSFET. When the MOSFET is off, the JFET turns off. When the MOSFET is on, the JFET is fully enhanced. This setup ensures high efficiency and low voltage drops during reverse conduction.

This versatile SiC FET with its wide gate threshold range and impressive specifications is a perfect fit for a wide range of applications, including AC/DC power supplies, EV chargers, photovoltaic inverters, energy storage systems, DC to DC converters, battery charging, server applications, UPS, induction heating, and more.

Discover the future of power semiconductors with the Qorvo UJ4SC075009B7S SiC FET. Available now on Mouser.com.

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00:08 - What is Qorvo's Gen 4 750 V, 23mΩ SiC FET?

01:16 - How does the cascode configuration improve performance
vs other transistor technologies?


03:02 - Where is the Qorvo UJ4SC075009B7S SiC FET used?


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