Santosh Kurinec is a Professor of Electrical & Microelectronic Engineering at Rochester Institute of Technology (RIT). She is a Fellow of IEEE, a Member of the New York Academy of Sciences, and an IEEE Electron Device Society Distinguished Lecturer. She is a recipient of the 2012 IEEE Technical Field Award. Dr. Kurinec was honored as the Engineer with Distinction by the Rochester Engineering Society in 2013. In 2016, she received the Medal of Honor from the International Association of Advanced Materials (IAAM).
Dr. Kurinec has been working on innovative electronic materials and device development ranging from electronic ceramics, magnetic and ferroelectric thin films, thin film transistors and MOSFETs, solar cells, and advanced memory devices such as magnetic, phase change, and resistive RAM. She has over 100 publications in research journals and conference proceedings. As the Department Head of Microelectronic Engineering from 2001-2009, Dr. Kurinec received a major grant from the National Science Foundation to prepare students for the frontiers of nanotechnology, in addition to research grants for emerging memory technologies. She was Visiting Scholar at IBM T.J Watson Research Center from 2008-2010. In 2016, she served as the International Chair of KAUST-NSF Conference on Electronic Systems for Sustainable Future, held at King Abdullah University of Science & Technology, Saudi Arabia.
She earned a Ph.D. in Physics from University of Delhi, India, and worked as a Scientist at the National Physical Laboratory, New Delhi. She worked as a postdoc at University of Florida. Prior to joining RIT, Dr. Kurinec was Assistant Professor of Electrical Engineering at Florida State University, Tallahassee, FL.
