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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots - a 2 minute Preview of the Experimental Protocol

Chloé Bureau-Oxton, Julien Camirand Lemyre, Michel Pioro-Ladrière
Université de Sherbrooke, Département de Physique, Faculté des Sciences;

This paper presents a detailed fabrication protocol for gate-defined semiconductor lateral quantum dots on gallium arsenide heterostructures. These nanoscale devices are used to trap few electrons for use as quantum bits in quantum information processing or for other mesoscopic experiments such as coherent conductance measurements.

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