Check out our latest "This Just In" video featuring onsemi's NVBG022N120M3S Silicon Carbide (SiC) MOSFETs! Designed for fast switching applications in electric vehicles (EVs) and hybrid electric vehicles (HEVs), these MOSFETs offer automotive-grade reliability and optimized performance.

onsemi's NVBG022N120M3S MOSFETs are 1200V M3S planar SiC MOSFETs, featuring planar technology that works reliably with negative gate voltage drives and turns off spikes on the gate. With an automotive-qualified 22 milliohm and 1200 volt rating, these MOSFETs are perfect for high-frequency, hard-switching power topologies commonly found in on-board chargers and DC to DC converters.

Optimized for fast switching applications, the NVBG022N120M3S MOSFETs boast low total gate capacitance and output capacitance, ensuring high-speed switching and minimal EON and EOFF losses for maximum efficiency. They deliver optimum performance with an 18 volt gate drive and offer design flexibility with compatibility with a 15 volt gate drive.

Packaged in a D2-PAK7L package for low common source inductance, these MOSFETs are available in various part numbers with different RDSON values and current ratings to suit different application needs. Industrial-grade equivalents are also available for non-automotive applications.

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