IBM and its Research Alliance partners GLOBALFOUNDRIES and Samsung have developed a first-of-a-kind process to build silicon nanosheet transistors that will enable 5 nanometer chips. Learn more about how this new architecture differs from the FinFET architecture used by today's chips.
Learn more about the difference between the Tri-Gate FinFET transistor and the new Silicon Nanosheet transistor: [ Ссылка ]
Learn more about the 5nm transistor announcement: [ Ссылка ]
