G3VM-21MT is the first electronic component in the world*2 to adopt a "T-type circuit structure"*3. With T-type circuit structure consisting of compact size and longer lifecycle solid state relays that output signals using no physical contact, the relay module minimizes the leakage current*4 which has long been a problem with semiconductor test equipment. G3VM-21MT allows high-precision measurement and improves productivity of electronic components.

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(*2) The world's first relay module adopting a "T-type circuit structure" in which several different MOS FET relays are combined, as of April 2019, according to our own research.
(*3) A circuit structure commonly used in electronic devices such as an attenuator, to minimize the leakage current.
(*4) A condition that occurs inside the electric circuit where current leaks through the insulation, which otherwise should have stopped electricity from passing through.

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Video Transcripts:


Omron's G3VM-T MOS FET relay modules provide low leakage less than 1 pA, which can improve application performance by increasing measurement accuracy and extending equipment life. They also offer excellent RF performance. Semiconductor switching elements have leakage currents. These leakage currents increase with increasing drain source voltage, and can cause measurement equipment to malfunction. The G3VM-T offers guaranteed leakage current less than 1 pA. This is possible because the module integrates three MOSFET pairs in a T-circuit configuration that shorts the middle node to GND when the relay is off. This reduces leakage current that flows into connected equipment. The modules also offer excellent RF performance for high frequency applications. The relays offer isolation of at least 20dB at frequencies up to 1.5GHz, while insertion loss is 3dB or less at frequencies up to 1GHz As a MOS FET-based relay, the G3VM-T delivers a much longer life than a mechanical relay, reducing equipment downtime and maintenance costs. The relays are also much smaller than mechanical relays, with a package size of 5mm x 3.75mm x 2.7mm. Omron's G3VM-T MOS FET relay module contributes to performance improvements in various types of test equipment. To learn more, visit www.components.omron.com

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